Spin-orbit torque induced magnetization switching in a magnetic recording head

ABSTRACT

The present disclosure generally relates to magnetic media devices, and more specifically, to a magnetic media drive employing a magnetic recording head. The recording head includes a main pole, a trailing shield hot seed layer, a spin Hall layer disposed between the main pole and the trailing shield hot seed layer, and a spin-torque layer disposed between the main pole and the trailing shield hot seed layer. Spin-orbit torque (SOT) is generated from the spin Hall layer. The spin-torque layer magnetization switching or precession is induced by the SOT. The SOT based head reduces the switching current and the V jump  due to higher spin polarization ratio, which improves energy efficiency. In addition, the spin Hall layer and the spin-torque layer are easier to form compared to the conventional pseudo spin-valve structure.

CROSS-REFERENCE TO RELATED APPLICATIONS

The present application is a Continuation of U.S. patent applicationSer. No. 15/379,226, filed on Dec. 14, 2016, which is incorporated byreference herein in its entirety.

BACKGROUND Field of the Disclosure

Embodiments of the present disclosure generally relate to data storagedevices, and more specifically, to a magnetic media drive employing amagnetic recording head.

Description of the Related Art

Over the past few years, microwave assisted magnetic recording (MAMR)has been studied as a recording method to improve the areal density of amagnetic media device, such as a hard disk drive (HDD). Conventionally,MAMR enabled magnetic recording is based on spin-transfer torque (STT),which is generated from a pseudo spin-valve structure. During operation,electrical current flows from the main pole to the trailing shield hotseed layer, and the spin-torque layer magnetization switching (orprecession) is induced by the STT.

The pseudo spin-valve structure is difficult to make, and high switchingcurrent and voltage (V_(jump)) are utilized during its operation,leading to a lower level of energy efficiency.

BRIEF DESCRIPTION OF THE DRAWINGS

So that the manner in which the above recited features of the presentdisclosure can be understood in detail, a more particular description ofthe disclosure, briefly summarized above, may be had by reference toembodiments, some of which are illustrated in the appended drawings. Itis to be noted, however, that the appended drawings illustrate onlytypical embodiments of this disclosure and are therefore not to beconsidered limiting of its scope, for the disclosure may admit to otherequally effective embodiments.

FIG. 1 is a schematic illustration of a magnetic media device accordingto one embodiment.

FIG. 2 is a fragmented, cross sectional side view of a read/write headfacing a magnetic disk according to one embodiment.

FIG. 3A is a perspective view of a portion of a magnetic write head ofFIG. 2 according to one embodiment.

FIG. 3B is a MFS view of the portion of the magnetic write head shown inFIG. 3 according to one embodiment.

FIG. 4 is a perspective view of a portion of a magnetic write head ofFIG. 2 according to another embodiment.

FIG. 5 is a perspective view of a portion of a magnetic write head ofFIG. 2 according to another embodiment.

To facilitate understanding, identical reference numerals have beenused, where possible, to designate identical elements that are common tothe figures. It is contemplated that elements disclosed in oneembodiment may be beneficially utilized on other embodiments withoutspecific recitation.

DETAILED DESCRIPTION

The present disclosure generally relates to data storage devices, andmore specifically, to a magnetic media drive employing a magneticrecording head. The head includes a main pole, a trailing shield hotseed layer, a spin Hall layer disposed between the main pole and thetrailing shield hot seed layer, and a spin-torque layer disposed betweenthe main pole and the trailing shield hot seed layer. Spin-orbit torque(SOT) is generated from the spin Hall layer. The spin-torque layermagnetization switching (or precession) is induced by the SOT. The SOTbased head reduces the switching current and the V_(jump) due to higherspin polarization ratio, which improves energy efficiency. In addition,the spin Hall layer and the spin-torque layer are easier to formcompared to the conventional pseudo spin-valve structure.

The terms “over,” “under,” “between,” and “on” as used herein refer to arelative position of one layer with respect to other layers. As such,for example, one layer disposed over or under another layer may bedirectly in contact with the other layer or may have one or moreintervening layers. Moreover, one layer disposed between layers may bedirectly in contact with the two layers or may have one or moreintervening layers. In contrast, a first layer “on” a second layer is incontact with the second layer. Additionally, the relative position ofone layer with respect to other layers is provided assuming operationsare performed relative to a substrate without consideration of theabsolute orientation of the substrate.

FIG. 1 is a schematic illustration of a data storage device such as amagnetic media device. Such a data storage device may be a singledrive/device or comprise multiple drives/devices. For the sake ofillustration, a single disk drive 100 is shown according to oneembodiment. As shown, at least one rotatable magnetic disk 112 issupported on a spindle 114 and rotated by a drive motor 118. Themagnetic recording on each magnetic disk 112 is in the form of anysuitable patterns of data tracks, such as annular patterns of concentricdata tracks (not shown) on the magnetic disk 112.

At least one slider 113 is positioned near the magnetic disk 112, eachslider 113 supporting one or more magnetic head assemblies 121 that mayinclude a spin Hall layer for generating SOT. As the magnetic disk 112rotates, the slider 113 moves radially in and out over the disk surface122 so that the magnetic head assembly 121 may access different tracksof the magnetic disk 112 where desired data are written. Each slider 113is attached to an actuator arm 119 by way of a suspension 115. Thesuspension 115 provides a slight spring force which biases the slider113 toward the disk surface 122. Each actuator arm 119 is attached to anactuator means 127. The actuator means 127 as shown in FIG. 1 may be avoice coil motor (VCM). The VCM includes a coil movable within a fixedmagnetic field, the direction and speed of the coil movements beingcontrolled by the motor current signals supplied by control unit 129.

During operation of the disk drive 100, the rotation of the magneticdisk 112 generates an air bearing between the slider 113 and the disksurface 122 which exerts an upward force or lift on the slider 113. Theair bearing thus counter-balances the slight spring force of suspension115 and supports slider 113 off and slightly above the disk surface 122by a small, substantially constant spacing during normal operation.

The various components of the disk drive 100 are controlled in operationby control signals generated by control unit 129, such as access controlsignals and internal clock signals. Typically, the control unit 129comprises logic control circuits, storage means and a microprocessor.The control unit 129 generates control signals to control various systemoperations such as drive motor control signals on line 123 and headposition and seek control signals on line 128. The control signals online 128 provide the desired current profiles to optimally move andposition slider 113 to the desired data track on disk 112. Write andread signals are communicated to and from write and read heads on theassembly 121 by way of recording channel 125.

The above description of a typical magnetic media device and theaccompanying illustration of FIG. 1 are for representation purposesonly. It should be apparent that magnetic media devices may contain alarge number of media, or disks, and actuators, and each actuator maysupport a number of sliders.

FIG. 2 is a fragmented, cross sectional side view of a read/write head200 facing the magnetic disk 112 according to one embodiment. Theread/write head 200 may correspond to the magnetic head assembly 121described in FIG. 1. The read/write head 200 includes a media facingsurface (MFS) 212, such as an air bearing surface (ABS), facing the disk112, a magnetic write head 210, and a magnetic read head 211. As shownin FIG. 2, the magnetic disk 112 moves past the write head 210 in thedirection indicated by the arrow 232 and the read/write head 200 movesin the direction indicated by the arrow 234.

In some embodiments, the magnetic read head 211 is a magnetoresistive(MR) read head that includes an MR sensing element 204 located betweenMR shields S1 and S2. In other embodiments, the magnetic read head 211is a magnetic tunnel junction (MTJ) read head that includes a MTJsensing device 204 located between MR shields S1 and S2. The magneticfields of the adjacent magnetized regions in the magnetic disk 112 aredetectable by the MR (or MTJ) sensing element 204 as the recorded bits.

The write head 210 includes a leading shield 206, a main pole 220, atrailing shield 240, a spin-torque layer 250, a spin Hall layer 252, anda coil 218 that excites the main pole 220. The coil 218 may have a“pancake” structure which winds around a back-contact between the mainpole 220 and the trailing shield 240, instead of a “helical” structureshown in FIG. 2A. The spin-torque layer 250 and the spin Hall layer 252are disposed between the main pole 220 and the trailing shield 240. Atrailing shield hot seed layer 241 may be coupled to the trailing shield240, and the trailing shield hot seed layer 241 may face the spin-torquelayer 250 and the spin Hall layer 252. The space between the spin-torquelayer 250 (including the spin Hall layer 252) and the main pole 220 isfilled with a dielectric material 254, such as alumina. The dielectricmaterial 254 is also disposed between the spin-torque layer 250(including the spin Hall layer 252) and the trailing shield hot seedlayer 241, and between the leading shield 206 and the main pole 220. Themain pole 220 may be a magnetic material such as a FeCo alloy. Thetrailing shield 240 may be a magnetic material such as NiFe alloy. Thetrailing shield hot seed layer 241 may include a high moment sputtermaterial, such as CoFeN or FeXN, where X includes at least one of Rh,Al, Ta, Zr, and Ti.

The spin-torque layer 250 may be a magnetic material, such as a softmagnetic material, for example CoFe alloy, NiFe alloy, CoFeB alloy orhalf-metals. The spin Hall layer 252 may be a heavy metal, such as betaphase Tantalum (β-Ta), beta phase tungsten (β-W), platinum (Pt), hafnium(Hf), a heavy metal alloy of tungsten with hafnium, iridium, or bismuthdoped copper, a topological insulator such as a (Bi,Sb)Te, orantiferromagnetic materials such as MnIr, XMn (X═Fe, Pd, Ir, and Pt) andCu—Au—I type antiferromagnets. In some embodiments, the spin Hall layer252 may be coupled to the spin-torque layer 250 (i.e., the spin Halllayer 252 may be in direct contact with the spin-torque layer 250). Insome embodiments, one or more intervening layers may be disposed betweenthe spin Hall layer 252 and the spin-torque layer 250. During operation,an electrical current flows through the spin Hall layer 252, which hasstrong spin-orbit coupling, and the spin Hall layer 252 generates SOT.The SOT generated by the spin Hall layer 252 induces magnetizationswitching (or precession) of the spin-torque layer 250. In someembodiments, the SOT based head has an effective spin injectionefficiency (β) of about 0.3 to 1.75, about 3 to 12 times larger thanthat of a head using a pseudo spin-valve structure (having an effectivespin injection efficiency (β) of about 0.1 to 0.30). Higher effectivespin injection efficiency leads to reduced critical switching currentdensity, which is defined by the formula:

$J_{CO} \approx {\frac{2e}{\hslash}\mu_{0}M_{S}t\; \alpha \; {\left( {H_{C} + {M_{eff}/2}} \right)/\beta}}$

Based on this formula, the 3 to 12 times increase in effective spininjection efficiency (β) for the SOT based head leads to a reduction ofthe critical switching current density by 3 to 12 times, which in turnbrings a higher energy efficiency (about 3 to 12 times less energy usedthan that of a head using a pseudo spin-valve structure).

FIG. 3A is a perspective view of a portion of the magnetic write head210 of FIG. 2 according to one embodiment. As shown in FIG. 3A, themagnetic write head 210 includes the main pole 220, the trailing shieldhot seed layer 241, the spin-torque layer 250 disposed between thetrailing shield hot seed layer 241 and the main pole 220, and the spinHall layer 252 disposed between the trailing shield hot seed layer 241and the main pole 220. The dielectric material 254 is omitted forclarity. The main pole 220 includes a first surface 304 and a secondsurface 305 adjacent the first surface 304. The first surface 304 may beat the MFS 212 and the second surface 305 may face the spin-torque layer250 and the spin Hall layer 252. The spin-torque layer 250 includes afirst surface 306 at the MFS 212, and the spin-torque layer 250 iscoupled to a first surface 308 of the spin Hall layer 252. The spin Halllayer 252 is recessed from the MFS 212. In other words, no portion ofthe spin Hall layer 252 is at the MFS 212.

The spin-torque layer 250 has a height H₁ in the Y direction (down-trackdirection) ranging from about 3 nm to about 25 nm, a thickness T₁ in theZ direction ranging from about 1.5 nm to about 15 nm, such as about 3nm, and a width W₁ in the X direction (cross-track direction). The spinHall layer 252 has a height H₂ in the Y direction ranging from about 5nm to about 25 nm (which is less than the write gap, defined by thedistance between the second surface 305 of the main pole 220 to thetrailing shield hot seed layer 241), a thickness T₂ in the Z directionranging from about 2.5 nm to about 100 nm, and a width W₂ in the Xdirection. In one embodiment, the spin Hall layer 252 is thicker thanthe spin-torque layer 250. In one embodiment, the spin Hall layer 252 isthinner than the spin-torque layer 250. In one embodiment, the width ofthe spin-torque layer 250 is the same as or smaller than the width ofthe spin Hall layer 252. In one embodiment, the height of thespin-torque layer 250 is the same as or smaller than the height of thespin Hall layer 252. During operation of the SOT based head, theelectrical current flows from the preamp (not shown) to and through thespin Hall layer 252 in the X direction. By contrast, during operation ofa head that uses a pseudo spin-valve structure, the electrical currentflows from the main pole to the trailing shield, i.e. , in the Ydirection.

FIG. 3B is a MFS view of the portion of the magnetic write head 210shown in FIG. 3A according to one embodiment. As shown in FIG. 3B, thespin Hall layer 252 includes a second surface 310 facing the secondsurface 305 of the main pole 220 and a third surface 312 facing asurface 314 of the trailing shield hot seed layer 241. The secondsurface 305 of the main pole 220 and the second surface 310 of the spinHall layer 252 are separated by a distance D₁, and the surface 314 ofthe trailing shield hot seed layer 241 and the third surface 312 of thespin Hall layer 252 is separated by a distance D₂. The dielectricmaterial 254 (FIG. 2) may be disposed between the second surface 305 ofthe main pole 220 and the second surface 310 of the spin Hall layer 252and between the surface 314 of the trailing shield hot seed layer 241and the third surface 312 of the spin Hall layer 252. In one embodiment,the distance D₁ is the same as the distance D₂. In one embodiment, thedistance D₁ is about 2 nm and the distance D₂ is about 2 nm. In oneembodiment, the distance D₁ is not the same as the distance D₂.

The spin-torque layer 250 includes a second surface 316 facing thesecond surface 305 of the main pole 220 and a third surface 318 facingthe surface 314 of the trailing shield hot seed layer 241. The secondsurface 316 and the third surface 318 of the spin-torque layer 250 maybe in contact with the first surface 308 of the spin Hall layer 252. Thesecond surface 316 may be in contact with the first surface 308 of thespin Hall layer 252 at a location on the first surface 308 that is adistance D₃ away from the second surface 310 of the spin Hall layer 252.The third surface 318 may be in contact with the first surface 308 ofthe spin Hall layer 252 at a location on the first surface 308 that is adistance D₄ away from the third surface 312 of the spin Hall layer 252.In one embodiment, the distance D₃ is the same as the distance D₄. Inone embodiment, the distance D₃ is about 2 nm and the distance D₄ isabout 2 nm. In one embodiment, the distance D₃ is not the same as thedistance D₄.

The width W₂ of the spin Hall layer 252 may be greater than the width W₃of the main pole 220 at the MFS 212. The width W₁ of the spin-torquelayer 250 may be the same, smaller than, or greater than the width W₃ ofthe main pole 220 at the MFS 212.

FIG. 4 is a perspective view of a portion of the magnetic write head 210of FIG. 2 according to another embodiment. As shown in FIG. 4, the mainpole 220 includes the first surface 304 at the MFS 212, the secondsurface 305 adjacent the first surface 304, a third surface 402 oppositethe second surface 305, a fourth surface 404 connecting the thirdsurface 402 and the second surface 305, and a fifth surface 406 oppositethe fourth surface 404. The main pole 220 at the MFS 212 may besurrounded by a spin-torque structure 408. The spin-torque structure 408may surround at least three surfaces of the first, second, third,fourth, and fifth surfaces 304, 305, 402, 404, 406. In one embodiment,the spin-torque structure 408 surrounds the second surface 305, thethird surface 402, the fourth surface 404, and the fifth surface 406.The spin-torque structure 408 may be made of the same material as thespin-torque layer 250 and may replace the spin-torque layer 250 shown inFIG. 2. The spin-torque structure 408 is coupled to a spin Hallstructure 410 recessed from the MFS 212. The spin Hall structure 410surrounds the main pole 220 at locations recessed from the MFS 212. Thespin Hall structure 410 may surround at least three surfaces of thefirst, second, third, fourth, and fifth surfaces 304, 305, 402, 404,406. In one embodiment, the spin Hall structure 410 surrounds the secondsurface 305, the third surface 402, the fourth surface 404, and thefifth surface 406. The spin Hall structure 410 may be made of the samematerial as the spin Hall layer 252 and may replace the spin Hall layer252 shown in FIG. 2. During operation, electrical current I₁ flows fromthe preamp (not shown) to the spin Hall structure 410, and theelectrical current I₁ may flow through the spin Hall structure 410 in aclockwise direction, as shown in FIG. 4. The spin Hall structure 410generates SOT, which induces magnetization switching (or precession) ofthe spin-torque structure 408. The spin-torque structure 408 may have athickness T₃ in the Z direction ranging from about 1.5 nm to about 15nm. The spin Hall structure 410 may have a thickness T₄ in the Zdirection ranging from about 2.5 nm to about 100 nm. In one embodiment,the thickness T₄ of the spin Hall structure 410 is greater than thethickness T₃ of the spin-torque structure.

The spin-torque structure 408 may include a first portion 412, a secondportion 416 opposite the first portion 412, a third portion 414connecting the first portion 412 and the second portion 416, and afourth portion 418 opposite the third portion 414. The first portion 412may be substantially parallel to the second surface 305 of the main pole220. The second portion 416 may be substantially parallel to the thirdsurface 402 of the main pole 220. The third portion 414 may besubstantially parallel to the fourth surface 404 of the main pole 220.The fourth portion 418 may be substantially parallel to the fifthsurface 406 of the main pole 220. A dielectric material, such as thedielectric material 254 shown in FIG. 2, may be disposed between eachportion 412, 416, 414, 418 and a corresponding surface of the surfaces305, 402, 404, 406.

The spin Hall structure 410 may include a first portion 420, a secondportion 424 opposite the first portion 420, a third portion 422connecting the first portion 420 and the second portion 424, and afourth portion 426 opposite the third portion 422. The first portion 420of the spin Hall structure 410 may be coupled to the first portion 412of the spin-torque structure 408, the second portion 424 of the spinHall structure 410 may be coupled to the second portion 416 of thespin-torque structure 408, the third portion 422 of the spin Hallstructure 410 may be coupled to the third portion 414 of the spin-torquestructure 408, and the fourth portion 426 of the spin Hall structure 410may be coupled to the fourth portion 418 of the spin-torque structure408. Each portion 420, 424, 422, 426 of the spin Hall structure 410 hasa width in the X direction and a height in the Y direction, and eachportion 412, 416, 414, 418 of the spin-torque structure 408 has a widthin the X direction and a height in the Y direction. The width of eachportion 420, 424, 422, 426 of the spin Hall structure 410 may be greaterthan the width of a corresponding portion of the spin-torque structure408. The height of each portion 420, 424, 422, 426 of the spin Hallstructure 410 may be greater than the height of a corresponding portionof the spin-torque structure 408.

FIG. 5 is a perspective view of a portion of the magnetic write head 210of FIG. 2 according to another embodiment. As shown in FIG. 5, thespin-torque structure 408 surrounds the second surface 305 of the mainpole 220, the fourth surface 404 of the main pole 220, and the fifthsurface 406 of the main pole 220. The spin-torque structure 408 does notsurround the third surface 402 of the main pole 220. The spin-torquestructure 408 surrounds three surfaces 305, 404, 406 of the main pole220 at the MFS 212. The spin-torque structure 408 includes the firstportion 412, a second portion 502 adjacent the first portion 412, and athird portion 504 opposite the second portion 502. The second portion502 may be the same as the second portion 416 shown in FIG. 4, and thethird portion 504 may be the same as the fourth portion 418 shown inFIG. 4. The first portion 412 may be substantially parallel to thesecond surface 305 of the main pole 220. The second portion 502 may besubstantially parallel to the fourth surface 404 of the main pole 220.The third portion 504 may be substantially parallel to the fifth surface406 of the main pole 220. A dielectric material, such as the dielectricmaterial 254 shown in FIG. 2, may be disposed between each portion 412,502, 504 and a corresponding surface of the surfaces 305, 404, 406.

The spin Hall structure 410 may include the first portion 420, a secondportion 506 adjacent the first portion 420, and a third portion 508opposite the second portion 506. The first portion 420 of the spin Hallstructure 410 may be coupled to the first portion 412 of the spin-torquestructure 408, the second portion 506 of the spin Hall structure 410 maybe coupled to the second portion 502 of the spin-torque structure 408,the third portion 508 of the spin Hall structure 410 may be coupled tothe third portion 504 of the spin-torque structure 408. The secondportion 506 of the spin Hall structure 410 may be the same as the thirdportion 422 shown in FIG. 4, and the third portion 508 of the spin Hallstructure 410 may be the same as the fourth portion 426 shown in FIG. 4.The third surface 402 of the main pole 220 is in contact with thedielectric material 254 (FIG. 2), and the dielectric material 254 is incontact with the leading shield 206 (FIG. 2). There is no spin Halllayer or spin-torque layer disposed between the main pole 220 and theleading shield 206 (FIG. 2).

The spin Hall structure 410 may include a first end 510 and a second end512. The first end 510 and the second end 512 are connected to thepreamp (not shown) by leads (not shown). During operation, electricalcurrent I₂ flows from the preamp to the first end 510 of the spin Hallstructure 410. The electrical current I₂ flows through the spin Hallstructure 410 in a clockwise direction to the second end 512, as shownin FIG. 5. The spin Hall structure 410 generates SOT, which inducesmagnetization switching (or precession) of the spin-torque structure408.

The benefits of having a SOT based head is that the spin polarizationratio of the SOT based head is about 3 to 12 times larger than that of ahead using a pseudo spin-valve structure, reducing the criticalswitching current density by 3 to 12 times. As a result of the reducedcritical switching current density, the SOT based head has a higherenergy efficiency, such as about 3 to 12 times less energy used thanthat of a head using a pseudo spin-valve structure. Furthermore, thespin-torque layer and the spin Hall layer of the SOT based head areeasier to form compared to the conventional pseudo spin-valve structure.

While the foregoing is directed to embodiments of the presentdisclosure, other and further embodiments of the disclosure may bedevised without departing from the basic scope thereof, and the scopethereof is determined by the claims that follow.

1. A magnetic recording head, comprising: a main pole; a trailing shieldhot seed layer; a spin Hall layer disposed between the main pole and thetrailing shield hot seed layer, wherein the spin Hall layer is recessedfrom a media facing surface; and a spin-torque layer disposed betweenthe main pole and the trailing shield hot seed layer, wherein thespin-torque layer includes a surface at the media facing surface.
 2. Themagnetic recording head of claim 1, wherein the spin Hall layercomprises beta phase Tantalum, beta phase tungsten, platinum, hafnium,an alloy of tungsten with hafnium, iridium, or bismuth doped copper,(Bi,Sb)Te, MnIr, XMn (X═Fe, Pd, Ir, and Pt), or antiferromagnets.
 3. Themagnetic recording head of claim 1, wherein the spin-torque layer iscoupled to the spin Hall layer.
 4. The magnetic recording head of claim1, wherein the spin-torque layer has a height ranging from about 3 nm toabout 25 nm and a thickness ranging from about 1.5 nm to about 15 nm. 5.The magnetic recording head of claim 4, wherein the spin Hall layer hasa height ranging from about 5 nm to about 25 nm and a thickness rangingfrom about 2.5 nm to about 100 nm.
 6. The magnetic recording head ofclaim 5, wherein the height of the spin Hall layer is greater than theheight of the spin-torque layer.
 7. The magnetic recording head of claim1, wherein the spin Hall layer has a width that is greater than a widthof the main pole at the media facing surface.
 8. The magnetic recordinghead of claim 1, wherein the spin Hall layer has a width that is greaterthan a width of the spin-torque layer.
 9. A magnetic recording head,comprising: a trailing shield hot seed layer; a leading shield; a mainpole, wherein the main pole includes a first surface at a media facingsurface, a second surface facing the trailing shield hot seed layer, athird surface opposite the second surface, a fourth surface connectingthe second surface and the third surface, and a fifth surface oppositethe fourth surface; a spin Hall structure recessed from the media facingsurface, wherein the spin Hall structure surrounds at least threesurfaces of the second, third, fourth and fifth surfaces of the mainpole; and a spin-torque structure coupled to the spin Hall structure,wherein the spin-torque structure surrounds at least three surfaces ofthe second, third, fourth and fifth surfaces of the main pole at themedia facing surface.
 10. The magnetic recording head of claim 9,wherein the spin Hall structure comprises beta phase Tantalum, betaphase tungsten, platinum, hafnium, an alloy of tungsten with hafnium,iridium, or bismuth doped copper, (Bi,Sb)Te, MnIr, XMn (X═Fe, Pd, Ir,and Pt), or antiferromagnets.
 11. The magnetic recording head of claim9, wherein the spin-torque structure has a thickness ranging from about1.5 nm to about 15 nm.
 12. The magnetic recording head of claim 11,wherein the spin Hall structure has a thickness ranging from about 2.5nm to about 100 nm.
 13. The magnetic recording head of claim 9, whereinthe spin-torque structure and the spin Hall structure surround thesecond, fourth and fifth surfaces of the main pole.
 14. The magneticrecording head of claim 9, wherein the spin-torque structure and thespin Hall structure surround the second, third, fourth and fifthsurfaces of the main pole.
 15. A data storage device, comprising: amagnetic recording head, comprising: a main pole; a trailing shield hotseed layer; a spin Hall layer disposed between the main pole and thetrailing shield hot seed layer, wherein the spin Hall layer is recessedfrom a media facing surface; and a spin-torque layer disposed betweenthe main pole and the trailing shield hot seed layer, wherein thespin-torque layer includes a surface at the media facing surface. 16.The data storage device of claim 15, wherein the spin Hall layercomprises beta phase Tantalum, beta phase tungsten, platinum, hafnium,an alloy of tungsten with hafnium, iridium, or bismuth doped copper,(Bi,Sb)Te, MnIr, XMn (X═Fe, Pd, Ir, and Pt), or antiferromagnets. 17.The data storage device of claim 15, wherein the spin-torque layer iscoupled to the spin Hall layer.
 18. The data storage device of claim 15,wherein the spin-torque layer has a height ranging from about 3 nm toabout 25 nm and a thickness ranging from about 1.5 nm to about 15 nm.19. The data storage device of claim 18, wherein the spin Hall layer hasa height ranging from about 5 nm to about 25 nm and a thickness rangingfrom about 2.5 nm to about 100 nm.
 20. The data storage device of claim19, wherein the height of the spin Hall layer is the same as or greaterthan the height of the spin-torque layer.